| 摘要 |
<p>Semiconductor device having a low dielectric constant material comprising a dielectric polymer and methods for forming such are described. The semiconductor device is formed by depositing a layer of a reaction solution, curing the reaction solution to form a dielectric polymer, and then processing the dielectric polymer to leave the dielectric polymer layer on the substrate. The reaction solution is formed by mixing together a polymer precursor, a crosslinking agent, and a solvent. The dielectric polymers of the present invention have a dielectric constant that can be tailored from about 3.0 to 1.0 and have mechanical properties that can be tailored by choice of reactants and reaction conditions.</p> |
