| 摘要 |
PROBLEM TO BE SOLVED: To provide an AlGaInP light-emitting element of a constitution, wherein the discontinuity of bands due to a hetero junction between an p-type clad layer and a p-type window layer is dissolved, an energy barrier is made low and an operating voltage can be reduced, and an epitaxial wafer for the light- emitting element. SOLUTION: A substrate 11 having an n-type conductivity, an n-type clad layer 13 consisting of at least an AlGaInP compound semiconductor layer, an active layer 14 consisting of an AlGaInp compound semiconductor layer of a composition of a band gap energy smaller than that of the layer 13, a clad layer 15 consisting of a p-type AlGaInP compound semiconductor layer of a composition of a band gap energy larger than that of the layer 14, and a p-type window layer 10 consisting of a composition which is gradually changed from an AlGaInP layer of the same composition as that of the layer 15 to a GaN layer, are laminated in this order on the substrate 11. |
