| 摘要 |
PROBLEM TO BE SOLVED: To obtain a nitrogen compound semiconductor light emitting device having a light emitting layer exhibiting a high light emission efficiency, by growing a first barrier layer, then subjecting a well layer to crystal growth on the first barrier layer while stopping the growth of the first barrier layer, and thereafter subjecting a second barrier layer to crystal growth on the well layer. SOLUTION: An InGaN barrier layer forming a light emitting layer is grown by supplying TMG and TMI as shown in a barrier layer growth period 102a. After the growth of the barrier layer has been terminated, the supply of TMG and TMI is stopped to interrupt the first growth as shown in a first growth interruption period 101a. Thereafter, the supply of TMG and TMI is resumed to grow an InGaN well layer forming the light emitting layer as shown in a well layer growth period 103a. Thus, the barrier layer growth step, the growth interruption step, and the well layer growth step are repeated in sequence to form a multiple quantum well structure including a predetermined number of well layers, and the barrier layer is finally grown on the well layers. |
