MANUFACTURE OF SILICON-SYSTEM THIN-FILM PHOTOELECTRIC CONVERSION DEVICE

摘要

PROBLEM TO BE SOLVED: To improve crystallization and a conversion efficiency by depositing a crystalline silicon-system thin-film photoelectric conversion layer by plasma CVD method and then performing annealing treatment by applying a laser beam after the deposition. SOLUTION: After a first conductivity-type semiconductor layer 104 and a crystalline silicon-system thin-film photoelectric conversion layer 105 are successively deposited on a rear surface electrode 110 by plasma CVD method, a laser beam is applied to the crystalline silicon-system thin-film photoelectric conversion layer 105, thus performing annealing treatment and hence improving the crystallization of the crystalline silicon-system thin-film photoelectric conversion layer 105. Also, since for example a hydrogen atom and an impurity existing on the surface layer of the crystalline silicon-system thin-film photoelectric conversion layer 105 can be removed, the surface texture and crystalline property of the crystalline silicon-system thin-film photoelectric conversion layer 105 can be improved. Thus optimization of the optical confinement effects of the photoelectric conversion layer and hence improvement the conversion efficiency of the photoelectric conversion device are realized.