| 发明名称 |
SLURRY, CMP METHOD AND PRODUCTION OF SEMICONDUCTOR DEVICE |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a Damascene interconnection with small dishing. SOLUTION: A Damascene interconnection is formed by removing excess metallic film and liner film on the outside of an interconnection trench by CMP method using slurry containing a polishing agent produced by cementing a plurality of active particles (silica) 1 through an inactive body (PMMA) 12.</p> |
| 申请公布号 |
JP2001015462(A) |
申请公布日期 |
2001.01.19 |
| 申请号 |
JP19990187027 |
申请日期 |
1999.06.30 |
| 申请人 |
TOSHIBA CORP;JSR CORP |
发明人 |
MINAMIZOE MANABU;MATSUI YUKITERU;FUKUSHIMA MASARU;YANO HIROYUKI;IIO AKIRA;HATTORI MASAYUKI;MOTONARI MASAYUKI |
| 分类号 |
B24B37/00;H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
B24B37/00 |
| 代理机构 |
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代理人 |
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