发明名称 |
METHOD AND SYSTEM FOR <i>IN SITU</i> CLEANING OF SEMICONDUCTOR MANUFACTURING EQUIPMENT USING COMBINATION CHEMISTRIES |
摘要 |
An in situ, two step or combination, method and system for cleaning of semiconductor manufacturing equipment (10) is provided. The present invention utilizes two separate fluorine based chemistries in each step which selectively target the removal of different types of deposits that build up on the equipment surfaces. In particular, powdery and dense film-like solid deposits, as well as a combination of both, build up on the chamber (12) surfaces and associated equipment components. These two types of deposits are removed selectively by the present invention. Such selective targeting of combined cleaning steps, yields an improved cleaning technique. In another embodiment, the method and system of the present invention provides for cleaning of the chamber (12) and associated equipment using separate steps with different chemicals, and then performing these steps in a variety of desired sequences.
|
申请公布号 |
WO0103858(A1) |
申请公布日期 |
2001.01.18 |
申请号 |
WO2000US40359 |
申请日期 |
2000.07.12 |
申请人 |
SILICON VALLEY GROUP, THERMAL SYSTEMS LLC |
发明人 |
MAYER, BRUCE, E.;CHATHAM, ROBERT, H., III;INGLE, NITIN, K.;YUAN, ZHENG |
分类号 |
B08B7/00;C23C16/44;H01L21/302;H01L21/304;H01L21/3065;H01L21/31;(IPC1-7):B08B7/00;B08B7/04;B08B9/00;B08B9/027 |
主分类号 |
B08B7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|