| 摘要 |
<p>A single electron tunneling transistor which has a multilayer structure exhibiting a single electron tunneling effect even with processing precision of more than 0.1νm. The multilayer structure of the single electron tunneling transistor is constituted by alternately growing an electrically conductive layer (11) and a tunneling barrier layer (12). The number of the layers is 50 or more. The structure has a micro-miniaturized tunneling junction of the order of 1νm2.</p> |
