发明名称 HIGH-FREQUENCY DEVICE AND METHOD OF MANUFACTURE THEREOF
摘要 A high-frequency device comprises a multilayer substrate (100); a waveguide (102a) formed on an inner layer (101) of the multilayer substrate (100) to propagate high-frequency signals; a high-frequency moving part (102b) formed on the inner layer and capable of touching the waveguide; a space (113a) formed in an upper part of the high-frequency moving part and located higher than the range of movement of the high-frequency moving part. Thus, the high-frequency moving part can operate in the space, that is, the inner layer can include a high-frequency rotating part.
申请公布号 WO0104985(A1) 申请公布日期 2001.01.18
申请号 WO2000JP04241 申请日期 2000.06.28
申请人 NEC CORPORATION;MARUMOTO, TSUNEHISA;IWATA, RYUICHI;ARA, YOUICHI;KUSAMITSU, HIDEKI;SUZUKI, KENICHIRO 发明人 MARUMOTO, TSUNEHISA;IWATA, RYUICHI;ARA, YOUICHI;KUSAMITSU, HIDEKI;SUZUKI, KENICHIRO
分类号 H01P1/12;H01P1/185;H01P3/08;H01Q1/38;H01Q3/26;H01Q3/30;H01Q9/04;H01Q21/06;H01Q23/00;H05K1/02;(IPC1-7):H01P1/12 主分类号 H01P1/12
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