| 摘要 |
<p>In a bipolar transistor part, a base layer (20a) of SiGe single crystal and an emitter layer (26) of about 100% Si single crystal are formed sequentially on a collector diffused layer (9). Over both end parts of the base layer (20a), a base underlying insulating film (5a) and a base lead out electrode (22) of polysilicon are formed. The base layer (20a) has both end parts which have the same thickness as that of the base underlying insulating film (5a) and a central part which is thicker than both end parts. The base underlying insulating film (5a) is an oxide film which is common to the gate insulating films (5b, 5c) in the CMOS part. The stress caused by the difference in thermal expansion coefficient between the SiGe layer constituting the base layer and the base underlying insulating film (5a) can be reduced, and a highly reliable BiCMOS device can be realized.</p> |
