| 摘要 |
<p>A porous siliceous film having a relative permittivity of less than 2.5; semiconductor devices having such films; and a coating composition for forming the film. The coating composition comprises an aluminum-containing polysilazane, a polyacrylic or polymethacrylic ester, and an organic solvent, and the above low-permittivity porous siliceous film can be formed by applying the composition and firing the resulting coating. The above siliceous film acts as an interlayer dielectric film, when formed in a semiconductor device.</p> |
