| 摘要 |
Power semiconductor devices include a semiconductor substrate (106, 206) having a face thereon and a buried electrically insulating layer (102, 202) extending laterally in the semiconductor substrate (106, 206) and having an opening therein. A drift region (104, 204) of first conductivity type is also provided in the semiconductor substrate (106, 206). To improve breakdown voltage characteristics, the drift region (104, 204) extends through the opening in the buried electrically insulating layer (102, 202) and has a first conductivity type doping concentration therein that is established at a level sufficient to generate a first conductivity type charge density of between 1x10<12> cm<-2> and 5x10<13> cm<-2> across the opening. |
