MULTILAYERED BODY, METHOD FOR FABRICATING MULTILAYERED BODY, AND SEMICONDUCTOR DEVICE

摘要

A silicon wafer (1) is cleaned by acid treatment and heated to remove matters adhering to the surface. Plasma of nitrogen is supplied over the surface of the Si wafer (1) to form an AlN crystal layer (80) not lattice-matching Si crystals on the surface of the Si wafer (1) by the surfactant effect of the radical nitrogen. The lattice spacing of the AlN crystal layer (80) is substantially equal to the lattice constant of the AlN crystals. Therefore, there is no strain in the Al crystal layer (80) due to the difference of lattice constant between the Al crystal layer (80) and the Si wafer (1), unlike the case in which an AlN crystal layer (80) lattice-matches the Si wafer.