METHOD FOR DOPING GALLIUM NITRIDE (GAN) SUBSTRATES AND THE RESULTING DOPED GAN SUBSTRATE
摘要
A method for doping Gallium Nitride (GaN) substrates is provided wherein Gallium (Ga) is transmuted to Germanium (Ge) by applying thermal neutron irradiation to a GaN substrate material or wafer. The Ge is introduced as an impurity in GaN and acts as a donor. The concentration of Ge introduced is controlled by the thermal neutron flux. When the thermal neutron irradiation is applied to a GaN wafer the fast neutrons are transmuted together with the former and cause defects such as the collapse of the crystallization. The GaN wafer is thermally treated or processed at a fixed temperature to eliminate such defects.
申请公布号
WO0104940(A1)
申请公布日期
2001.01.18
申请号
WO2000US18897
申请日期
2000.07.12
申请人
GAN SEMICONDUCTOR, INC.;KANG, SANG, KYU;CHO, HAK, DONG