发明名称 |
A METHOD OF FORMING A SILICON NITRIDE LAYER ON A SEMICONDUCTOR WAFER |
摘要 |
The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semicondutor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.
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申请公布号 |
WO0104376(A1) |
申请公布日期 |
2001.01.18 |
申请号 |
WO2000US40339 |
申请日期 |
2000.07.10 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YANG, MICHAEL, X.;KAO, CHIEN-TEH;LITTAU, KARL;CHEN, STEVEN, A.;HO, HENRY;YU, YING |
分类号 |
C23C16/42;C23C16/34;C23C16/44;H01L21/31;H01L21/318;(IPC1-7):C23C16/34 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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