| 发明名称 |
A flash memory array |
| 摘要 |
<p>A layout and method for FLASH memory with no SAS process. The layout involves a source contact (91) that connects the source regions of a series of memory cells (11) and forms the source line (24). The source contact is formed using a hard mask insulator layer (100) as a part of the memory cell gate stack (110), (115) which insulates the control gate (18) during source contact (91) formation. <IMAGE></p> |
| 申请公布号 |
EP1069620(A1) |
申请公布日期 |
2001.01.17 |
| 申请号 |
EP20000305876 |
申请日期 |
2000.07.12 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MEHRAD, FREIDOON;XIA, JIE;AMBROSE, THOMAS M. |
| 分类号 |
G11C16/16;H01L21/8239;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/115;H01L21/824 |
主分类号 |
G11C16/16 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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