发明名称 |
Method for fabricating a semiconductor structure with reduced leakage current destiny |
摘要 |
<p>A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the surface (12) of the silicon substrate (10), forming a buffer layer (20) utilizing molecular oxygen; and forming one or more layers of a high dielectric constant oxide (22) on the buffer layer (20) utilizing activated oxygen. <IMAGE></p> |
申请公布号 |
EP1069606(A2) |
申请公布日期 |
2001.01.17 |
申请号 |
EP20000115127 |
申请日期 |
2000.07.12 |
申请人 |
MOTOROLA INC. |
发明人 |
DROOPAD, RAVINDRANATH;YU, ZHIYI;RAMDANI, JAMAL |
分类号 |
H01L21/31;H01L21/02;H01L21/316;H01L21/8246;H01L27/105;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|