Method for evaluating oxygen concentration in semiconductor silicon single crystal

摘要

A method and apparatus for evaluating an oxygen concentration in a semiconductor silicon single crystal highly doped with boron at a low cost with a high sensitivity and high reproducibility. The single crystal (1), which is doped with boron of a high concentration of 10<17> atoms/cm<3> or higher, is irradiated with a light (3) having a greater energy than that of bandgap of the semiconductor silicon e.g. Kr<+> laser light with lambda =647m while holding the single crystal at a temperature of room temperature to 50 K and photoluminescence intensities in the vicinity of a photon energy of 0.96 eV ( lambda SIMILAR 1297nm) of a photoluminescence spectrum emitted from the single crystal under the above irradiation are measured to evaluate an oxygen concentration in the single crystal.