| 摘要 |
There is provided a multi-layer substrate whose thickness is not increased, even if a semiconductor package is mounted. A semiconductor device 47 is housed inside a housing section 57 of a container side laminated substrate 10a, bonding pads 42 of the semiconductor device 47 are made to contact on bumps 16a exposed at the bottom of the housing section 57, an adhesive layer on the housing section 57 is cause to melt by heating and pressing, and the semiconductor device is fastened to the container side laminated substrate 10a, and after that, a cover side laminated substrate 6b is electrically and mechanically connected to the container side laminated substrate 10a. A multi-layer substrate 65 having the semiconductor device 47 buried inside a multi-layer substrate is thus obtained. A shield section having a large surface area is arranged close to a circuit formation surface of the semiconductor device 47, and by connecting the shield section to a ground potential noise is prevented from penetrating into the semiconductor device 47. <IMAGE> |
