发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
<p>The present invention provides a process apparatus 100 including an airtight process vessel 102, an exhaust system 128 for exhausting gas from the process vessel 102, and a baffle plate 120 for partitioning the process vessel 102 into a process chamber 122 for processing an object and an exhaust passage 124 communicating with the exhaust system 128, the baffle plate 120 has a plurality of slits 120a through which the process chamber 122 and the exhaust passage 124 communicate with each other, and each of the slits 120a has a tapered surface 132 on an inner surface toward the process chamber, the tapered surface corresponding to not less than 1/4 of a depth of the slit. <IMAGE></p> |
申请公布号 |
EP1069603(A1) |
申请公布日期 |
2001.01.17 |
申请号 |
EP19990937830 |
申请日期 |
1999.03.04 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SUGIYAMA, NORIKAZU;OKAYAMA, NOBUYUKI;SAIGUSA, HIDEHITO;OZAWA, JUN |
分类号 |
H01J37/32;H01L21/302;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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