发明名称 PLASMA PROCESSING APPARATUS
摘要 <p>The present invention provides a process apparatus 100 including an airtight process vessel 102, an exhaust system 128 for exhausting gas from the process vessel 102, and a baffle plate 120 for partitioning the process vessel 102 into a process chamber 122 for processing an object and an exhaust passage 124 communicating with the exhaust system 128, the baffle plate 120 has a plurality of slits 120a through which the process chamber 122 and the exhaust passage 124 communicate with each other, and each of the slits 120a has a tapered surface 132 on an inner surface toward the process chamber, the tapered surface corresponding to not less than 1/4 of a depth of the slit. <IMAGE></p>
申请公布号 EP1069603(A1) 申请公布日期 2001.01.17
申请号 EP19990937830 申请日期 1999.03.04
申请人 TOKYO ELECTRON LIMITED 发明人 SUGIYAMA, NORIKAZU;OKAYAMA, NOBUYUKI;SAIGUSA, HIDEHITO;OZAWA, JUN
分类号 H01J37/32;H01L21/302;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01J37/32
代理机构 代理人
主权项
地址