| 摘要 |
An amorphous silicon-based thin film photovoltaic device having a glass substrate (10) and a laminate structure formed on the glass substrate and consisting of a transparent electrode (20), a semiconductor layer (30) containing an amorphous silicon-based semiconductor and a back electrode (40), in which the glass substrate (10) has a transmittance of 88 to 90% for light having a wavelength of 700 nm and 84 to 87% for light having a wavelength of 800 nm. <IMAGE> |
