| 摘要 |
PURPOSE: A radio frequency power amplifier module for a dual band is provided to reduce the number of elements by sharing a power amplifier module. CONSTITUTION: A dual band power amplifier is formed with a multitude of amplification transistors(32,34,36) and a multitude of matching circuit portion connected among the amplification transistors(32,34,36). The amplification transistor(36) is formed with a high band communication frequency interception portion(37a) for removing a center frequency of a high band communication, a matching circuit portion(38a) for matching a low band communication frequency signal to a rear end, a low band harmonic cutoff portion(39a) for removing harmonic elements from the low band communication frequency, a low band communication frequency interception portion(37b) for removing a center frequency of a low band communication, a matching circuit portion(38b) for matching a high band communication frequency signal to the rear end, a high band harmonic cutoff portion(39b) for removing the harmonic elements from the high band communication frequency signal.
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