| 摘要 |
The device comprises a quantum well layer (81) and a quantum dot layer (85) which are separated by a tunnel barrier (83), means for applying an electric field (73, 91) and means for measuring a current characteristic (93, 95) of the quantum well layer (81). A semiconductor device which can be configured to work as high density optical memory, an amplifying photo-transistor, an electro-optic modulator, an optical switch or a high-speed (greater than >100 GHz) field effect transistor. |
