发明名称 |
Non-plasma halogenated gas flow prevent metal residues |
摘要 |
An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.
|
申请公布号 |
US6174373(B1) |
申请公布日期 |
2001.01.16 |
申请号 |
US20000476917 |
申请日期 |
2000.01.04 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
GHANAYEM STEVE;KORI MORIS;MAHAJANI MAITREYEE;RAJAGOPALAN RAVI |
分类号 |
C23C16/02;C23C16/44;C23C16/455;C23C16/52;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00;H05H1/00 |
主分类号 |
C23C16/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|