| 发明名称 |
Salicide device with borderless contact |
| 摘要 |
A method and structure for a field effect transistor structure for dynamic random access memory integrated circuit devices has a gate conductor, salicide regions positioned along sides of the gate conductor, a gate cap positioned above the gate conductor and at least one self-aligned contact adjacent the gate conductor.
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| 申请公布号 |
US6174762(B1) |
申请公布日期 |
2001.01.16 |
| 申请号 |
US19990260311 |
申请日期 |
1999.03.02 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRONNER GARY B.;GAMBINO JEFFREY P.;HSU LOUIS L.;MANDELMAN JACK A.;RADENS CARL J.;TONTI WILLIAM R. |
| 分类号 |
H01L21/336;H01L21/8242;(IPC1-7):H01L21/823;H01L21/320;H01L21/476;H01L29/769 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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