发明名称 |
Dry etching method of metal oxide/photoresist film laminate |
摘要 |
Dry etching of a metal oxide film exposed without being coated with a photoresist is carried out with plasma of a gas obtained by mixing hydrogen iodide with at least one gas selected from the group consisting of a group consisting of fluorine gas and fluorine-based compound gases and a group consisting of nitrogen gas and nitrogen-based compound gases, and then after the exposing of the above mentioned photoresist film to plasma of oxygen gas, the remaining photoresist film is removed by etching with plasma of a gas obtained by mixing oxygen gas with at least one gas selected from the group consisting of a group consisting of fluorine gas and fluorine-based compound gases and a group consisting of nitrogen gas and nitrogen-based compound gases. Volume flow rate conditions of hydrogen iodide gas or oxygen gas and the gas selected from the group consisting of a group consisting of fluorine gas and fluorine-based compound gases and a group consisting of nitrogen gas and nitrogen-based compound gases are prescribed in specific ranges. |
申请公布号 |
EP0896373(A3) |
申请公布日期 |
2001.01.17 |
申请号 |
EP19980306294 |
申请日期 |
1998.08.06 |
申请人 |
MITSUI CHEMICALS, INC. |
发明人 |
SADAMOTO, MITSURU;YANAGAWA, NORIYUKI;IWAMORI, SATORU;SASAKI, KENJU |
分类号 |
H01L21/3213;H01L31/18 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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