| 摘要 |
A method of producing an optical waveguide, in which a substrate of silicon is etched porously to a defined depth by anodic oxidation in an electrolyte containing hydrofluoric acid. The etched substrate is doped in a suitable dopant liquid containing cations. The doped layer of porous silicon is stabilized at an elevated temperature, and the stabilized layer is oxidized with a further increase in temperature. The oxidized porous layer is made to collapse at a temperature sufficient for partial melting. The surface of the collapsed silicon dioxide layer is covered in a pattern by a lithographic technique, and the cations are replaced by silver ions in the uncovered areas of the surface by bringing the surface in contact with a solution containing silver ions or silver complex ions.
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