发明名称 FORMATION OF TITANIUM NITRIDE THIN FILM AND TITANIUM NITRIDE THIN FILM FORMED IN ACCORDANCE WITH THE METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a titanium nitride thin film capable of forming a titanium nitride thin film having high hardness and capable of exhibiting the intrinsic physical properties characteristic of the material on the surface of a metallic material with increased adhesion in an economical vacuum and to provide a titanium nitride thin film formed in accordance with this method. SOLUTION: This is a method for forming a titanium nitride thin film in which the surface of a metallic material is irradiated with a nitrogen beam and a titanium beam by an ion beam mixing method to form a titanium nitride thin film, and the titanium nitride thin film is formed in such a manner that the vacuum is controlled higher than 10 mTorr, the temp. of the surface of the metallic material is controlled to 20 to 1,000 deg.C, the nitrogen beam has >=20% ionization degree and is accelerated to 0.1 to 5 keV, and moreover, the intensity of the nitrogen beam IN satisfies IN>=ITi to the intensity of the titanium beam ITi.
申请公布号 JP2001011623(A) 申请公布日期 2001.01.16
申请号 JP19990183801 申请日期 1999.06.29
申请人 UNIV KANSAI 发明人 YOKOTA KATSUHIRO;SUGIMOTO TAKASHI;AKAMATSU KATSUYA;TAMURA SUSUMU;NAKAO KAZUYOSHI
分类号 C23C14/48;C23C14/06;(IPC1-7):C23C14/48 主分类号 C23C14/48
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