| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target having specific resistance comparable to that of pure Cu, increased in electromigration resistance, minimal in the defects of a sputtered film used for the formation of a wiring part in a wafer of a semiconductor device, etc., and capable of improving productive efficiency, and its manufacturing method. SOLUTION: The sputtering target for formation of Cu alloy wiring, excellent in electromigration resistance, has a composition in which 0.02-10 atomic %, in total, of one or more elements selected from the group consisting of Ce, Dy, Er, La, Pr, Sc, Sr, Tb, and Y are added to Cu. This sputtering target for formation of Cu alloy wiring can be manufactured by carrying out the addition of one or more elements selected from the group consisting of Ce, Dy, Er, La, Pr, Sc, Sr, Tb, and Y in the form of hydrides.
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