| 摘要 |
The invention encompasses a semiconductor processing method of depositing polysilicon. A substrate is provided. The substrate comprises a first material and a second material which join at a junction, and which are different from one another. The substrate is exposed to a SiH4-comprising source gas to form a nucleation layer consisting of Si. After the exposing, a polysilicon layer is chemical vapor deposited atop the nucleation layer.
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