| 摘要 |
A method for forming metal thin films for wiring wherein the formation of the metal films by chemical vapor deposition technique is carried out in two steps, with the deposition temperature of the second step being set to be higher than the deposition temperature of the first step, whereby a via hole or a wiring groove can be embedded without the formation of voids. As a result a highly reliable wiring can be achieved even on a fine LSI.
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