| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for film formation of a patterned resist film and capable of forming a thin film pattern with a size from milli-meter order to a sub-milli-meter order at a necessary and sufficient precision, to provide a method for formation of a thin film pattern, and to provide an optical component by employing the apparatus and the method. SOLUTION: By employing a resist film lithography apparatus 1 comprising a rotating and holding mechanism 11 capable of chucking and rotating an axial center of a holder 13 for holding disk-like glass 12 with about 1 μm concentricity around a rotation axis 19 with about 1 μm concentricity and a lithography mechanism 21 capable of moving a pen provided with a pen lead 22p of 0.1 mm diameter in the x-axis direction, the y-axis direction, and the z-axis direction within 1 μm precision, a patterned resist film is drawn with ±5 μm precision directly on the disk-like glass 12 and then an aluminum thin film is formed on the entire surface and after that the resist film is removed together with the thin film thereon to leave an aluminum thin film with a reverse pattern to that of the resist film. |
