发明名称 |
E-beam direct writing to pattern step profiles of dielectric layers applied to fill poly via with poly line, contact with metal line, and metal via with metal line |
摘要 |
A method is disclosed for employing direct electron beam writing in the lithography used for forming step-profiles in semiconductor devices. The number of steps in the profiles are not limited. An electron beam sensitive resist is formed over a substrate. The resist is then exposed to a scanning electron beam having precise information, including proximity effect correction data, to directly form stair-case-like openings in the resist. The highly accurately dimensioned step-profiles are then transferred into the underlying layers by performing appropriate etchings. The resulting structures are shown to be especially suitable for forming damascene interconnects for submicron technologies.
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申请公布号 |
US6174801(B1) |
申请公布日期 |
2001.01.16 |
申请号 |
US19990261997 |
申请日期 |
1999.03.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
TZU SAN-DE;CHIU CHING-SHIUN;LIN CHIA-HUI |
分类号 |
G03F7/20;H01L21/027;H01L21/306;H01L21/308;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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