Vertically integrated magnetic memory

摘要

A vertically integrated magnetic memory with Hall effect sensing or reading. It has a ferromagnetic structure with a nearly enclosed magnetic path, which is a vertical structure integrated on a chip. Each memory cell has a closed magnetic field that has high strength for a strong Hall effect. The magnet is a closed loop, robust reproducible magnet. A memory array of such cells uses little power in that only few cells need to draw the read current for a short time required to read the information. A silicon or GaAs chip implementation of the memory is one embodiment, among others, wherein the field required to saturate the electrons can be achieved without excessive power.