发明名称 |
Method for quantifying proximity effect by measuring device performance |
摘要 |
Improved techniques for quantifying proximity effects during fabrication of integrated circuits are disclosed. The improved techniques use active features formed on a semiconductor wafer to quantify proximity effects. According to the improved techniques, a device performance quantity for an active feature is measured, and then a feature length for the active feature is determined in accordance with the measured device performance quantity. The fabrication processing can then be evaluated and/or compensated based on the determined feature length. In one example, the active feature can be a metal-oxide semiconductor (MOS) transistor and the device performance quantity can be current.
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申请公布号 |
US6174741(B1) |
申请公布日期 |
2001.01.16 |
申请号 |
US19970994273 |
申请日期 |
1997.12.19 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HAENSCH WILFRIED;PREIN FRANK;FAUL JUERGEN |
分类号 |
H01L21/027;G01N13/14;G01N27/00;G01N37/00;G03F7/20;H01L21/66;(IPC1-7):G01R31/26 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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