| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved gas feeder to introduce a shield gas to a chamber through a large number of passages at the substantially constant and equal flow rate in a chemical vapor deposition device. SOLUTION: A device 155 comprises a processing gas injector 190, and a shield assembly 200 having a large number of shield bodies 210, 215 adjacent to the processing gas injector. The shield bodies 210, 215 have a measuring tube 240 provided with a screen 230 and holes 245 in a row to feed the shield gas through the screen. The shield gas is fed to the measuring pipe 240 through a large number of flow passages 255, and each flow passage has a flow rate limiter 265 having an orifice 270 dimensioned to give the shield gas of equal flow rate from each of the shield bodies 210, 215.
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