发明名称 |
Method for forming coaxial silicon interconnects |
摘要 |
An interconnect apparatus for testing bare semiconductor dice comprises raised contact members on a semiconductive substrate. The contact members are covered with an insulation layer and a conductive cap connected by a conductive trace to a testing circuit. The trace is covered with coaxial layers of a silicon containing insulation and a metal for shielding the trace from "cross-talk" and other interference. An apparatus for simultaneous testing of multiple dies on a wafer has thermal expansion characteristics matching those of the semiconductor die or wafer and provides clean signals.
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申请公布号 |
US6175242(B1) |
申请公布日期 |
2001.01.16 |
申请号 |
US19990467437 |
申请日期 |
1999.12.20 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AKRAM SALMAN;HEMBREE DAVID R.;WOOD ALAN G. |
分类号 |
G01R1/04;G01R31/28;(IPC1-7):G01R31/02 |
主分类号 |
G01R1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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