发明名称 Method for forming coaxial silicon interconnects
摘要 An interconnect apparatus for testing bare semiconductor dice comprises raised contact members on a semiconductive substrate. The contact members are covered with an insulation layer and a conductive cap connected by a conductive trace to a testing circuit. The trace is covered with coaxial layers of a silicon containing insulation and a metal for shielding the trace from "cross-talk" and other interference. An apparatus for simultaneous testing of multiple dies on a wafer has thermal expansion characteristics matching those of the semiconductor die or wafer and provides clean signals.
申请公布号 US6175242(B1) 申请公布日期 2001.01.16
申请号 US19990467437 申请日期 1999.12.20
申请人 MICRON TECHNOLOGY, INC. 发明人 AKRAM SALMAN;HEMBREE DAVID R.;WOOD ALAN G.
分类号 G01R1/04;G01R31/28;(IPC1-7):G01R31/02 主分类号 G01R1/04
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