发明名称 CMP POLISHING METHOD AND SEMICONDUCTOR MANUFACTURING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide sufficient operation of a polishing particle when a surface active agent separates at polishing time since an absorbing state of the surface active agent to the polishing particle becomes weak physical adsorption by using negatively charged polishing particles as an abrasive for performing chemical mechanical polishing processing, and adding an anionic water soluble high polymer surface active agent. SOLUTION: A polishing machine receiver 23 is arranged on a stage 21 via a bearing 22, and a polishing machine 24 is installed on it. Polishing cloth 25 for polishing a wafer is stuck on it. A driving shaft 26 is connected to these central part to rotate the polishing machine receiver 23 and the polishing machine 24. This shaft rotates via a rotary belt 28 by a motor 27. The wafer is arranged in a position opposed to the polishing cloth 25, and is fixed to sucking cloth 30 and a template 29 installed on a sucker 31 by vacuum or water filling. A driving stand 36 vertically moves, and an abrasive is supplied between the wafer fixed to the sucker 31 and the polishing cloth 25 to polish the wafer.</p>
申请公布号 JP2001009702(A) 申请公布日期 2001.01.16
申请号 JP19990181545 申请日期 1999.06.28
申请人 TOSHIBA CORP 发明人 TATEYAMA YOSHIKUNI;HIRANO TOMOYUKI
分类号 B24B37/00;C09K3/14;H01L21/304;H01L21/3105;(IPC1-7):B24B37/00 主分类号 B24B37/00
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