发明名称 |
Spacers to block deep junction implants and silicide formation in integrated circuits |
摘要 |
An efficient method of forming deep junction implants in one region without affecting the implant of a second region of an integrated circuit is provided. This is achieved by forming spacers of deep junction devices with the same material used to fill the gaps of shallow junction devices.
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申请公布号 |
US6174756(B1) |
申请公布日期 |
2001.01.16 |
申请号 |
US19970940236 |
申请日期 |
1997.09.30 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;IBM |
发明人 |
GAMBINO JEFFREY P.;ALSMEIER JOHANN;BRONNER GARY |
分类号 |
H01L27/108;H01L21/76;H01L21/822;H01L21/8234;H01L21/8242;H01L27/04;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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