| 摘要 |
The present invention relates to a booster circuit including a first P-MOS transistor, the source of which is connected to a high voltage line; a second N-MOS transistor, the drain of which is connected to a first supply potential and the source of which is connected to the drain of the first transistor; a first capacitor connected between the gate of the first transistor and a terminal of reception of a first clock signal; a second capacitor connected between the gate of the second transistor and the reception terminal for the first clock signal; a third capacitor connected between the drain of the first transistor and a reception terminal for a second clock signal, complementary to the first clock signal; two precharge diodes the first capacitor from the high voltage line; and one precharge diode for the second capacitor.
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