发明名称 |
SINGLE CRYSTAL PULLING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide the subject device designed to prevent the turbulent flow of an argon gas from a flow tube. SOLUTION: This single crystal pulling device having such a scheme as to place a crucible inside a chamber to be fed with an inert gas and pull a semiconductor single crystal C from a semiconductor melt L in the crucible, has a nearly cylindrical flow tube 17 disposed above the crucible coaxially therewith and having the function to allow an inert gas to flow therethrough and guide the gas onto the surface of the melt L; wherein the flow tube 17 is disposed in such a manner that its lower end 17b is in close proximity to the surface of the melt L and chamfered as well.
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申请公布号 |
JP2001010889(A) |
申请公布日期 |
2001.01.16 |
申请号 |
JP19990177535 |
申请日期 |
1999.06.23 |
申请人 |
MITSUBISHI MATERIALS SILICON CORP;MITSUBISHI MATERIALS CORP |
发明人 |
HOSODA KOJI;FU SHINRIN |
分类号 |
H01L21/208;C30B15/00;C30B29/06;(IPC1-7):C30B15/00 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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