| 摘要 |
A PIN photodiode comprising a P-type layer, an N-type layer, and an I-type layer provided between said, P-type layer and said N-type layer, wherein a junction surface between said I-type layer and said N-type layer is formed by joining a high specific resistance wafer preformed as said I-type layer to a high concentration N-type wafer preformed as said N-type layer. The thickness of said high specific resistance wafer has been adjusted in accordance with the peak value of the wavelength of light rays to be accepted. Therefore, N+ carriers do not exist in the I-type layer and the thickness of the I-type layer can be freely defined, causing the frequency characteristic and the wavelength sensitivity characteristic to be satisfying.
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