| 摘要 |
<p>PROBLEM TO BE SOLVED: To attain excellent abrasive capability and flatness without necessitating a particular dispersing step before use by incorporating an abrasive grain comprising at least one of particles of oxides, nitrides and carbides of silicon, aluminum, zirconium and cerium, which has a specific weight average particle size and contains a specific amount or less of particles having a particle size not larger than a specific value. SOLUTION: This abrasive agent for a semiconductor contains an abrasive grain comprising at least one of particles of oxides, nitrides and carbides of silicon, aluminum, zirconium and cerium, which has a wt. average particle size of 0.20-1.0μm and contains 20 wt.% or less of particles having a particle size of not larger than 0.15μm. The abrasive grain is preferably cerium oxide. Preferably, it is a fixed abrasive grain comprising an abrasive grain and a resin binder, or a free abrasive grain comprising a slurry comprising an abrasive grain and an aqueous medium.</p> |
