发明名称 Projection exposure method and method of manufacturing a projection exposure apparatus
摘要 An exposure method of illuminating a pattern on a mask by a light beam from an illuminating optical system and exposing the image of the pattern onto a photosensitive substrate through a projection optical system comprises the steps of discriminating the kind of the mask, setting the state of at least one of the field stop of the illuminating optical system, the aperture stop of the illuminating system and the aperture stop of the projection optical system in conformity with the discriminated kind of the mask, and projecting the image of the pattern on the mask onto a predetermined area of the photosensitive substrate.
申请公布号 US6175405(B1) 申请公布日期 2001.01.16
申请号 US19980207407 申请日期 1998.12.08
申请人 NIKON CORPORATION 发明人 KAWAI HIDEMI
分类号 G03F7/20;H01L21/027;H01L21/30;(IPC1-7):G03B27/42;G03B27/54;G03B27/72;G03B27/32 主分类号 G03F7/20
代理机构 代理人
主权项
地址