| 摘要 |
A method is provided for manufacturing, in four masking steps, an active matrix for a liquid crystal display screen whose control transistors are of the top-gate type. The liquid crystal display screen obtained by means of this method is particularly suitable for use in image projection systems. The method comprises the steps of:depositing and etching a first opaque layer on a transparent insulating plate;depositing an insulating transparent layer;depositing and etching a transparent conductor;selectively depositing an ohmic contact and subsequently depositing an intrinsic semiconductor material and a gate insulating material, and first etching of the assembly,depositing and etching an opaque conducting layer, andetching of the semiconductor layer and gate insulating layer by using as a mask the etched opaque conducting layer.
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