发明名称 |
Anti-reflective silicon nitride film using in-situ deposition |
摘要 |
An anti-reflective coating and method of forming the anti-reflective coating are described wherein the anti-reflective coating is part of a silicon nitride layer formed on a semiconductor integrated circuit substrate. The anti-reflective coating is formed under the photoresist layer for greater effectiveness but does not disrupt the process flow since the anti-reflective coating is part of the silicon nitride layer. A first silicon nitride layer is formed having an index of refraction of about 2.1. A second silicon nitride layer having an index of refraction of about 1.9 and a second thickness is formed on the first silicon nitride layer. A layer of photoresist is then formed on the second silicon nitride layer. The second thickness is chosen to be equal to the wavelength of the light used to expose the layer of photoresist divided by the quantity of 4 multiplied by 1.9. The second silicon nitride layer acts as an effective anti-reflective layer.
|
申请公布号 |
US6174644(B1) |
申请公布日期 |
2001.01.16 |
申请号 |
US19990345362 |
申请日期 |
1999.07.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
SHIEH MENG-SHIUN;CHENG PO-CHIEH |
分类号 |
G03F7/09;H01L21/027;(IPC1-7):G03F7/00;B32B9/04 |
主分类号 |
G03F7/09 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|