| 摘要 |
PURPOSE: A gate electrode forming method of a semiconductor device is to suppress an increase of resistance by preventing a tungsten film from oxidation in forming a reproduction oxide film. CONSTITUTION: A method for forming a gate electrode of a semiconductor device comprises the steps of: depositing and patterning a gate oxide film,(11) a polysilicon film(12), a metal barrier film(13), a metal film(14), and a hard disk film(15) on a semiconductor substrate(10) in this order, and then forming a gate electrode; depositing a protective film for an oxidation suppression on the whole resulting materials; ion etching the protective film, and then forming a side wall protective film(21) for blocking the side wall of the gate electrode; thermal processing the side wall protective film under a hydrogen gas atmosphere; and reproducing and oxidizing the whole resulting materials. The protective film is a nitride film, and the nitride film has a thickness of 50-500 angstroms.
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