METHOD FOR MANUFACTURING STACK GATE FLASH EEPROM CELL

摘要

PURPOSE: A method for manufacturing a stack gate flash EEPROM cell is provided to prevent an increasing effect of the thickness of an ONO(Oxide Nitride Oxide) layer by reducing the oxidation effect of the ONO layer due to a spacer nitride. CONSTITUTION: The method comprises a process for forming a floating gate and a control gate by using a self-aligned process. A spacer nitride(27) is formed at a side face of an upper portion of the first polysilicon layer(21) after performing the self-aligned process. An ONO layer is prevented from the oxidation when performing a succeeding process. Accordingly, the efficiency deterioration of an erasing operation is prevented from the increasement of the thickness of the ONO layer.