| 摘要 |
PURPOSE: A gate oxide film formation method in semiconductor devices is provided to be capable of prohibiting a gate leakage current by a direct tunneling current, by depositing an Al2O3 thin film having a dielectric constant relatively higher than a low thermal oxide film. CONSTITUTION: The surface of an active region on a silicon substrate(1) separated by a field oxide film(2) is first sheet off to remove a native oxide film. An Al2O3 thin film(4) is then formed in the ALD(atomic layer deposition) equipment. Next, the Al2O3 thin film is treated by annealing process in the furnace under the atmosphere of N2O, thus removing defects within the Al2O3 thin film and forming an oxynitride film between the silicon substrate and the Al2O3 thin film. After depositing a poysilicon film on the Al2O3 thin film, WSix, TiSi2 or tungsten film is deposited to form word lines.
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