METHOD FOR FORMING CHARGE STORAGE ELECTRODE IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: A charge storage electrode formation method in semiconductor devices is provided to be capable of facilitating subsequent mask process or etch process by forming slantly a dummy capacitor in the outer most of the cell. CONSTITUTION: An oxide film pattern for forming a lower charge storage electrode is formed on a semiconductor substrate. A silicon layer for a lower charge storage electrode is formed on the resulting surface. A photosensitive mask is formed on the resulting surface, thus removing the silicon layer in the portion other than the oxide film pattern and a portion of the silicon layer for a lower charge storage electrode formed in the outer most area is also removed. The photosensitive film and the silicon layer on the result are removed to expose an upper portion of the oxide film pattern. After removing the photosensitive film and the oxide film pattern, a dielectric film(150) is formed so that the outer most lower charge storage electrode can be slanted.