SELF-ALIGNED PHOTOLITHOGRAPHY AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING THE SAME

摘要

PURPOSE: A self-aligned photolithography capable of an unassisted process without an additional mask is provided together with a fabrication method for a semiconductor device by using the photolithography. CONSTITUTION: An underlying pattern layer(62) is formed on a semiconductor substrate(61), and an etch target layer(63) is formed thereon. Then, a photoresist layer(64) is coated on the etch target layer(63) and exposed without a mask. Here, a portion(a) of the photoresist layer(64) aligned with the underlying pattern layer(62) by a diffraction phenomenon of the light is partly exposed, but the other portion is wholly exposed. After that, by the following development process, the portion of the photoresist layer(64) aligned with the underlying pattern layer(62) only is removed. The photoresist layer(64) is either removed or left according to the use of a negative or positive type thereof.